ROHM has recently announced the release of the smallest transistors in the industry. The VML0604 package (0.6mm x 0.4mm, t = 0.36mm) reduces board board space by 50% compared with alternative offerings, making it ideal for smartphones and other devices requiring smaller, thinner form factors.
In recent years the consumer electronics market including smartphones and wearable devices, has driven the trend towards greater compactness and functionality, increasing demand for smaller, thinner components.
And for transistors in particular, in addition to technical challenges such as bonding stability and package processing accuracy, it has been especially difficult to decrease transistor size, resulting in higher ON resistances and a maximum voltage in the 20V range. ROHM, however, was able to successfully reduce package size and ON resistance while improving voltage resistance up to 60V, providing breakthrough performance and reliability.
Availability: Now (Samples), June 2014 (OEM quantities)
1.?Industry-small form factor significantly reduces mounting area
New high precision package and transistor processes, combined with internal structure optimization, have allowed ROHM to successfully develop the smallest transistor package in the industry, the VML0604, measuring just 0.6mm x 0.4mm x 0.36mm. As a result, mounting area is reduced 50%, making it ideal for high density applications in portable devices of all types.
This new package will be expanded to small-signal MOSFETs, contributing to increased space-savings in a variety of offerings.
2.?Precise 0.2mm terminal spacing improves mountability
As devices become smaller substrate mounting becomes increasingly difficult. In response ROHM has maintained a 0.2mm terminal gap that facilitates mounting using existing equipment.
3. Ultra-low ON resistance in the world's smallest form factor
Decreasing package dimensions places a limit on element size. As transistor size decreases ON resistance increases dramatically, making it difficult to maintain the performance of conventional small-signal transistors.
However, adopting a new process makes it possible to develop ultra-compact transistors featuring a maximum voltage of 30V along with industry-leading* 0.25? ON resistance (VGS=4.5V).
4. Broad lineup includes 40-60V products
Higher breakdown voltages in the 40-60V range are possible, even while maintaining low ON resistance.
Transistors utilized for their high-speed switching capability.
The resistance value between the Drain-Source when voltage is applied between Gate-Source. The smaller the value the easier the current will flow, reducing switching losses.