Toshiba has launched a 100V low-ON-resistance, low-leakage power MOSFET using the latest trench MOS process as the latest addition to its line-up for automotive applications. The new product, "TK55S10N1", achieves low ON-resistance with a combination of a chip in the "U-MOS ?-H series" fabricated with the latest 8th generation trench MOS process and a "DPAK+" package that utilizes copper connectors.
Low ON-resistance (VGS=10V), RDS(ON) = 5.5m?(typ.)
Low leakage current IDSS=10µA (max) (VDS=rated voltage)
"DPAK+" package that realizes low-ON-resistance by utilizing Cu connectors.